Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate
نویسندگان
چکیده
Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO2. Amorphous silicon devices exhibited mobility values of 1.3 cmVs, which are very high taking into account the amorphous nature of the material. Nanocrystalline transistors presented mobility values as high as 11.5 cmVs and resulted in low threshold voltage shift (~ 0.5 V).
منابع مشابه
Electronic Transport in Low Temperature Nanocrystalline Silicon Thin-film Transistors Obtained by Hot-wire Cvd
Hydrogenated nanocrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition has been incorporated as the active layer in bottom-gate thin-film transistors. These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to p...
متن کاملPaper Reference Number: O/P9
In this paper we present results on silicon thin films deposited by Hot-Wire CVD at low substrate temperature (200oC). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800oC. A crystalline fraction of 50% was obtained for the sample deposited at 1700oC. The results obtained seemed to indicate that atomic hydrogen plays a leading rol...
متن کاملAmorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD
We investigate the impact of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs). It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic mechanical stress in the a-Si:H layer. We study a series of bottom-gate TFTs incorporating a-Si:H deposited by VHF PECVD and hot-wire CVD. All TFTs...
متن کاملTOP-GATE MICRO-CRYSTALLINE SILICON TFTs PROCESSED AT LOW TEMPERATURE (<200°C)
N type as well P type top gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200°C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs) doped μc-films deposited by HW-CVD. The gate insulator is a...
متن کاملSurface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films C.Voz
In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...
متن کامل